DocumentCode
556839
Title
Metal grain suppression and DOI capture rate improvement in 32 nm technology node
Author
Li, Hsiao-Leng ; Hung, Che-Lung ; Luoh, Tuung ; Yang, Ling-Wu ; Yang, Tahone ; Chen, Kuang-Chao ; Lu, Chih-Yuan
fYear
2011
fDate
5-6 Sept. 2011
Firstpage
1
Lastpage
15
Abstract
A collection of slides from the author´s conference presentation about the metal grain suppression and DOI capture rate improvement in 32 nm technology node is presented.
Keywords
semiconductor device manufacture; semiconductor technology; DOI capture rate improvement; metal grain suppression; technology node; wavelength 32 nm; Broadband communication; Inspection; Light sources; Optical filters; Sensitivity; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
1523-553X
Print_ISBN
978-1-4577-1647-8
Type
conf
Filename
6086066
Link To Document