DocumentCode :
556839
Title :
Metal grain suppression and DOI capture rate improvement in 32 nm technology node
Author :
Li, Hsiao-Leng ; Hung, Che-Lung ; Luoh, Tuung ; Yang, Ling-Wu ; Yang, Tahone ; Chen, Kuang-Chao ; Lu, Chih-Yuan
fYear :
2011
fDate :
5-6 Sept. 2011
Firstpage :
1
Lastpage :
15
Abstract :
A collection of slides from the author´s conference presentation about the metal grain suppression and DOI capture rate improvement in 32 nm technology node is presented.
Keywords :
semiconductor device manufacture; semiconductor technology; DOI capture rate improvement; metal grain suppression; technology node; wavelength 32 nm; Broadband communication; Inspection; Light sources; Optical filters; Sensitivity; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1523-553X
Print_ISBN :
978-1-4577-1647-8
Type :
conf
Filename :
6086066
Link To Document :
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