Title :
Advanced low power product upgrading solution for mobile computing applications
Author_Institution :
TSMC, Ltd
Abstract :
Theoretical concept of transistor leakage, SRAM standby leakage source, advanced polylithography and leakage reduction technique are discussed.
Keywords :
electrical faults; lithography; mobile computing; transistors; SRAM standby leakage source; advanced low power product upgrading solution; advanced polylithography; leakage reduction technique; mobile computing application; transistor leakage; Collaboration; Joints; Junctions; Lithography; Mobile computing; Tuning;
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-1647-8