DocumentCode :
556841
Title :
Advanced low power product upgrading solution for mobile computing applications
Author :
Lu, Chih-Hung
Author_Institution :
TSMC, Ltd
fYear :
2011
fDate :
5-6 Sept. 2011
Firstpage :
1
Lastpage :
10
Abstract :
Theoretical concept of transistor leakage, SRAM standby leakage source, advanced polylithography and leakage reduction technique are discussed.
Keywords :
electrical faults; lithography; mobile computing; transistors; SRAM standby leakage source; advanced low power product upgrading solution; advanced polylithography; leakage reduction technique; mobile computing application; transistor leakage; Collaboration; Joints; Junctions; Lithography; Mobile computing; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1523-553X
Print_ISBN :
978-1-4577-1647-8
Type :
conf
Filename :
6086068
Link To Document :
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