DocumentCode :
556849
Title :
Reduction of void defects on copper dual-damascene interconnect by integrated data-driven manufacturing
Author :
Tanaka, Tomoya
Author_Institution :
Panasonic Corporation
fYear :
2011
fDate :
5-6 Sept. 2011
Firstpage :
1
Lastpage :
10
Abstract :
A collection of slides from the author´s conference presentation about the reduction of void defects on copper dual-damascene interconnect by integrated data-driven manufacturing is presented.
Keywords :
copper; interconnections; semiconductor device manufacture; semiconductor industry; voids (solid); copper dual damascene interconnect; integrated data driven manufacturing; void defects; Analytical models; Collaboration; Joints; Manufacturing; Metrology; Monitoring; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1523-553X
Print_ISBN :
978-1-4577-1647-8
Type :
conf
Filename :
6086076
Link To Document :
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