DocumentCode :
556858
Title :
The unopened contact hole induced by Ammonium Chloride deposit after sidewall silicon nitride formation in high aspect ratio contact(HARC)
Author :
Yuan, Yin Te
Author_Institution :
Powerchip Technology Corp., Module Technology Division, Diffusion group
fYear :
2011
fDate :
5-6 Sept. 2011
Firstpage :
1
Lastpage :
10
Abstract :
NH4Cl deposited defect formation in HARC. Unopened contact due to etch-back blocking. Two approach for defect improvement; DI water rinse; High temp. N2 purge. Both approach is effective and easily integrated. Stringent queue time control is critical.
Keywords :
ammonium compounds; chemical vapour deposition; crystal defects; etching; silicon compounds; DI water rinse; HARC; N2 purge; NH4Cl; Si3N4; ammonium chloride deposit; defect formation; etch-back blocking; high aspect ratio contact; high temperature; sidewall silicon nitride formation; stringent queue time control; unopened contact hole; Collaboration; Furnaces; Joints; Manufacturing; Silicon; Silicon compounds; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1523-553X
Print_ISBN :
978-1-4577-1647-8
Type :
conf
Filename :
6086085
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=556858
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