• DocumentCode
    55786
  • Title

    OFWAR: Reducing SSD Response Time Using On-Demand Fast-Write-and-Rewrite

  • Author

    Qi Wu ; Tong Zhang

  • Author_Institution
    Comput. & Syst. Eng. Dept., Rensselaer Polytech. Inst. (RPI), Troy, NY, USA
  • Volume
    63
  • Issue
    10
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    2500
  • Lastpage
    2512
  • Abstract
    This paper presents a cross-layer design strategy to reduce SSD response time and its variation. The key is to cohesively exploit system-level run-time data access workload variation and temporal locality and device-level NAND flash memory write latency versus data retention time trade-off. The basic idea is simple: once write intensity of the workload increases and begins to degrade SSD response time, we speed up memory programming at the penalty of shorter data retention time, and rewrite these short-lifetime data later, if necessary, when workload write intensity drops. A scheduling solution is developed to effectively implement this design strategy. Simulations over various workloads were carried out and the results demonstrate that the cross-layer design strategy can reduce the average SSD response time by up to 52.3%.
  • Keywords
    flash memories; scheduling; OFWAR; SSD response time reduction; cross-layer design strategy; data retention time; data retention time trade-off; device-level NAND flash memory write latency; memory programming; on-demand fast-write-and-rewrite; scheduling solution; short-lifetime data rewriting; solid-state drives; system-level run-time data access workload variation; temporal locality; workload write intensity; Ash; Logic gates; Memory management; Noise; Programming; Threshold voltage; Time factors; Solid-state drive; average response time; data retention; workload variation; write latency;
  • fLanguage
    English
  • Journal_Title
    Computers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9340
  • Type

    jour

  • DOI
    10.1109/TC.2013.114
  • Filename
    6515121