DocumentCode
55786
Title
OFWAR: Reducing SSD Response Time Using On-Demand Fast-Write-and-Rewrite
Author
Qi Wu ; Tong Zhang
Author_Institution
Comput. & Syst. Eng. Dept., Rensselaer Polytech. Inst. (RPI), Troy, NY, USA
Volume
63
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
2500
Lastpage
2512
Abstract
This paper presents a cross-layer design strategy to reduce SSD response time and its variation. The key is to cohesively exploit system-level run-time data access workload variation and temporal locality and device-level NAND flash memory write latency versus data retention time trade-off. The basic idea is simple: once write intensity of the workload increases and begins to degrade SSD response time, we speed up memory programming at the penalty of shorter data retention time, and rewrite these short-lifetime data later, if necessary, when workload write intensity drops. A scheduling solution is developed to effectively implement this design strategy. Simulations over various workloads were carried out and the results demonstrate that the cross-layer design strategy can reduce the average SSD response time by up to 52.3%.
Keywords
flash memories; scheduling; OFWAR; SSD response time reduction; cross-layer design strategy; data retention time; data retention time trade-off; device-level NAND flash memory write latency; memory programming; on-demand fast-write-and-rewrite; scheduling solution; short-lifetime data rewriting; solid-state drives; system-level run-time data access workload variation; temporal locality; workload write intensity; Ash; Logic gates; Memory management; Noise; Programming; Threshold voltage; Time factors; Solid-state drive; average response time; data retention; workload variation; write latency;
fLanguage
English
Journal_Title
Computers, IEEE Transactions on
Publisher
ieee
ISSN
0018-9340
Type
jour
DOI
10.1109/TC.2013.114
Filename
6515121
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