Title :
High efficiency, wide band 50 Watt, 28V InGaP/GaAs HBT MMIC
Author :
Ma, Wenlong ; Sun, Xiaopeng ; Lam, Philip ; Hu, Peter ; Yao, Jingshi ; Liu, Louis ; Chau, Frank ; Zhang, Xiangkun ; Lin, Barry
Author_Institution :
TriQuint Semicond., San Jose, CA, USA
Abstract :
This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-ldB of the device reaches 47dBm (50W), with a gain of around 31dB, collect efficiency of 65 % . Test with a DPD (digital pre-distortion) system, this MMIC can reach ACLR of -57dBc at Pout=41dBm with collect efficiency of 36% for WCDMA two carriers modulation signal (PAR=6.5dBc, 2c0110 signal configuration).
Keywords :
III-V semiconductors; MMIC; compensation; gallium arsenide; heterojunction bipolar transistors; indium compounds; DPD system; HVHBT MMIC; InGaP-GaAs; TriQuint Semiconductor; WCDMA; breakdown voltage; carrier modulation signal; digital predistortion system; frequency 750 MHz; frequency 960 MHz; high-efficiency HBT MMIC; high-voltage HBT MMIC; power 50 W; temperature compensation bias circuit; voltage 28 V; wideband HBT MMIC; Gallium arsenide; Heterojunction bipolar transistors; Linearity; MMICs; Performance evaluation; Power amplifiers; Temperature measurement;
Conference_Titel :
Microwave Conference (EuMC), 2011 41st European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-235-6
