Title :
A low power 9.75/10.6GHz PLL in SiGe:C BiCMOS for Ku-band satellite LNBs
Author :
Philippe, P. ; Bardy, S. ; Wane, S. ; Moreau, F. ; Thomas, E. ; Praamsma, L.
Author_Institution :
NXP Semicond., Caen, France
Abstract :
A low cost / low power PLL for Ku-band satellite down-converters has been fabricated in SiGe:C BiCMOS process. The PLL occupies 0.5mm2 of silicon and draws less than 25mA from 2.7/3.3V supplies. It achieves state-of-art integrated phase noise performance of 1° rms and spurs level below -65dBc.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; direct broadcasting by satellite; field effect MMIC; low-power electronics; phase locked loops; phase noise; Ku-band satellite LNB; Ku-band satellite down-converters; SiGe:C; SiGe:C BiCMOS process; frequency 10.6 GHz; frequency 9.75 GHz; integrated phase noise; low cost PLL; low power PLL; low-noise block; voltage 2.7 V; voltage 3.3 V; Phase locked loops; Phase noise; Radio frequency; Satellite broadcasting; Voltage-controlled oscillators; Direct broadcast satellite; frequency dividers; microwave bipolar integrated circuits (ICs); oscillators; phase noise; phase-locked loops;
Conference_Titel :
Microwave Conference (EuMC), 2011 41st European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-235-6
