Title :
A new design flow based on behavioral modeling applied to wideband and highly efficient power amplifiers with GaN packaged transistors
Author :
Demenitroux, W. ; Mazière, C. ; Campovecchio, M. ; Quere, R.
Author_Institution :
Amcad Eng., Limoges, France
Abstract :
This paper describes a new methodology of wideband and highly efficient design with packaged transistors using behavioral model in CAD software. The Multi-Harmonic Volterra (MHV) model of a 10W GaN transistor has been extracted from Time domain Load-Pull measurements, and has been implemented into CAD software for the design procedure. The designed power amplifier exhibits, in measurement, a drain efficiency between 65-75% on a 33% bandwidth around 2.15 GHz for a minimum output power of 40 dBm.
Keywords :
III-V semiconductors; gallium compounds; microwave amplifiers; power amplifiers; power transistors; wide band gap semiconductors; CAD software; GaN; bandwidth 2.15 GHz; behavioral modeling; design flow; efficiency 65 percent to 75 percent; multiharmonic Volterra model; packaged transistors; power 10 W; power amplifiers; time domain load-pull measurements; Bandwidth; Frequency measurement; Harmonic analysis; Impedance; Power amplifiers; Solid modeling; Transistors; Behavioral Modeling; High efficiency; Power amplifier; Wideband; design flow;
Conference_Titel :
Microwave Conference (EuMC), 2011 41st European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-235-6
