Effects of gate bias voltage and compression level on a X-band MMIC Class F−1 PA

In this contribution, the performances of a Class F^-1 power amplifier are studied, highlighting their dependence on transistor bias point and input power level. First, a concise mathematical analysis is given, describing the drain current behavior. Theoretical assessments are validated through non- linear measurements performed on a X-band MMIC PA in GaAs technology, which can achieve a peak efficiency of 54% in correspondence of a saturated output power of 27 dBm.