A 60GHz CMOS power amplifier using capacitive cross-coupling neutralization with 16 % PAE

Author

Asada, Hiroki ; Matsushita, Kota ; Bunsen, Keigo ; Okada, Kenichi ; Matsuzawa, Akira

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2011

fDate

10-13 Oct. 2011

Firstpage

1115

Lastpage

1118

Abstract

This paper presents a 60GHz power amplifier using a capacitive cross-coupling neutralization. The capacitive cross-coupling neutralization contributes to improve power gain and reverse isolation. Moreover, the transmission line for matching networks is optimized to achieve highly power-efficient amplifier. The 3-stage differential power amplifier is fabricated in a 65nm CMOS process and evaluated with 1.2V power supply. The power amplifier achieves power gain of 23.2 dB, output power of 10dBm at 1 dB compression point, saturated output power of 14.6 dBm, peak PAE of 16.3%, and power consumption of 135 mW.

Keywords

CMOS analogue integrated circuits; differential amplifiers; millimetre wave power amplifiers; 3-stage differential power amplifier; CMOS power amplifier; PAE; capacitive cross-coupling neutralization; efficiency 16 percent; efficiency 16.3 percent; frequency 60 GHz; gain 1 dB; gain 23.2 dB; power 135 mW; power gain; reverse isolation; size 65 nm; transmission line; voltage 1.2 V; CMOS integrated circuits; Circuit stability; Gain; Power generation; Solid state circuits; Stability analysis; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2011 41st European

Conference_Location

Manchester

Print_ISBN

978-1-61284-235-6

Type

conf

Filename

6101808