DocumentCode :
558182
Title :
A 1kW-class S-band compact waveguide combiner unit with GaN HPAs for WPT and space communication
Author :
Noji, Hirofumi ; Shibuya, Yasuhiro ; Isono, Kosuke ; Hori, Masakazu ; Kobayashi, Yuta ; Ishizaki, Toshio ; Furuta, Shigeki ; Moriguchi, Yukio ; Yamamoto, Zen-ichi ; Kawasaki, Shigeo
fYear :
2011
fDate :
10-13 Oct. 2011
Firstpage :
234
Lastpage :
237
Abstract :
Using a GaN high power amplifier and a double 4-inputport circular waveguide combiner, a 1kW S-band compact waveguide combiner unit operating at 2.1 GHz was assembled. The maximum power of 200W was realized with a Peltier device for heat sink. The high power amplifier unit shows the PAE of more than 50% with an AB-class operation under the temperature around 40 degrees C. The four GaN high power amplifiers were combined with the 4-inputports circular waveguide combiner, having an output power of 540W. Further the 1kW output power connecting two 500W-class power combiners was achieved. The combining efficiency of the 1kW-class power combiner unit was achieved to about 90%.
Keywords :
III-V semiconductors; circular waveguides; gallium compounds; heat sinks; power amplifiers; power combiners; space communication links; GaN; Peltier device; S-band compact waveguide combiner unit; WPT; combining efficiency; double 4-inputport circular waveguide combiner; frequency 2.1 GHz; heat sink; high power amplifier unit; power 1 kW; power 2 W; power 540 W; power combiner unit; space communication; Cooling; Gallium nitride; High power amplifiers; Power combiners; Power generation; GaN power amplifier; WPT; powercombiner; space communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2011 41st European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-235-6
Type :
conf
Filename :
6101825
Link To Document :
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