Cryogenic evaluation of a 30–50 GHz 0.15-μm MHEMT low noise amplifier for radio astronomy applications

Author

Weng, Shou-Hsien ; Chang, Hong-Yeh ; Chiong, Chau-Ching ; Chen, Ming-Tang

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2011

fDate

10-13 Oct. 2011

Firstpage

934

Lastpage

937

Abstract

Cryogenic evaluation of a 30-50 GHz 0.15-μm InGaAs metamorphic high electron mobility transistor (MHEMT) low noise amplifier (LNA) for radio astronomy applications is presented in this paper. For the on-wafer measurement, the LNA exhibits a bandwidth of 23 GHz with a small signal gain of 20.4 dB. For the cryogenic measurement, the LNA is further assembled in a packaged module. At a cryogenic temperature of 16 K, the best equivalent noise temperature is 23.4 K at 30.5 GHz. The proposed MHEMT LNA can be compared with the advanced InP-based LNAs, and has potential for the radio astronomy applications due to its broad bandwidth and low noise figure.

Keywords

III-V semiconductors; cryogenic electronics; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; modules; radioastronomy; InGaAs; LNA; MHEMT low-noise amplifier; bandwidth 23 GHz; cryogenic evaluation; cryogenic measurement; cryogenic temperature; frequency 30 GHz to 50 GHz; gain 20.4 dB; metamorphic high electron mobility transistor; noise temperature; on-wafer measurement; packaged module; radio astronomy applications; size 0.15 mum; temperature 16 K; temperature 23.4 K; Cryogenics; Extraterrestrial measurements; Frequency measurement; Gain; HEMTs; Noise; MHEMT; broadband; cryogenic; low noise amplifier; radio astronomy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2011 41st European

Conference_Location

Manchester

Print_ISBN

978-1-61284-235-6

Type

conf

Filename

6101921