Title :
Baseband digital predistortion of a 10 W GaN power amplifier
Author :
Madero-Ayora, M.J. ; Barataud, D. ; Dine, M.S.E. ; Neveux, G. ; Nebus, J.M. ; Reina-Tosina, J. ; Allegue-Martínez, M. ; Crespo-Cadenas, C.
Author_Institution :
Camino de los Descubrimientos s/n, Univ. de Sevilla, Seville, Spain
Abstract :
In this paper, two different models for the baseband digital predistortion of a GaN power amplifier have been applied: the widely-used Memory Polynomial (MP) model and the recently proposed Behavioral Model with Dynamic Deviation Reduction for Wideband Amplifiers (DVBW). Their performance has been experimentally compared in terms of Adjacent Channel Power Ratio, Error Vector Magnitude and Power Added Efficiency. The DVBW model outperformed in general the MP model, exhibiting also good generalization characteristics.
Keywords :
III-V semiconductors; distortion; gallium compounds; polynomials; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; GaN power amplifier; baseband digital predistortion; dynamic deviation reduction; memory polynomial; power 10 W; wideband amplifiers; Baseband; Digital video broadcasting; Gallium nitride; Power generation; Predistortion; Vectors; Wideband;
Conference_Titel :
Microwave Conference (EuMC), 2011 41st European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-235-6
