Optimum position of the two-dimensional electron gas sample in the cryogenic metallic cavity system used in studying Ratchet Effect

This paper introduces electromagnetic simulation models representing the complex experimental metallic cavity setup used in the investigation of Ratchet Effect in semiconductor heterojunction sample, at low temperature. The optimum position of the semiconductor sample inside this metallic cavity can be estimated depending on; the distribution of the electric field inside the cavity, the uniformity of the incident electric field linear polarization and the uniformity of the incident electric field density on the sample surface.