Microwave R&D inside Japan

Author

Nishino, Tamotsu ; Kawasaki, Shigeo ; Suematsu, Noriharu ; Nishikawa, Kenjiro

Author_Institution

Mitsubishi E lectric Corp, Kamakura, Japan

fYear

2011

fDate

10-13 Oct. 2011

Firstpage

1328

Lastpage

1331

Abstract

In this paper, we review recent R&D topics inside Japan. As to devices, the topics cover GaN high power amplifier, RFIC, RF-MEMS tunable devices and metamaterials. In regard to systems, the topics cover millimeter wave communications, wireless power transfer system. Also we review some national projects funded by Ministry of Internal Affairs and Communications (MIC), Ministry of Economy, Trade and Industry (METI) and Ministry of Education, Culture, Sports, Science and Technology (MEXT). Then we conclude with activities of the Institute of Electronics, Information and Communication Engineers (IEICE).

Keywords

III-V semiconductors; gallium compounds; metamaterials; micromechanical devices; microwave technology; millimetre wave devices; power amplifiers; radiofrequency integrated circuits; research and development; reviews; wide band gap semiconductors; GaB; Japan; RF-MEMS tunable devices; RFIC; high power amplifier; metamaterials; microwave research and development; millimeter wave communications; wireless power transfer system; Band pass filters; Educational institutions; Gallium nitride; Microwave communication; Microwave filters; Resonator filters; Wireless communication; GaN RFIC; IEICE; Japan; METI; MEXT; MIC; Metamaterials; Millimeter wave communications; RF-MEMS; Wireless power transmission; microwave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2011 41st European

Conference_Location

Manchester

Print_ISBN

978-1-61284-235-6

Type

conf

Filename

6102002