Graphene nano ribbon field effect transistor for high frequency applications

We propose an overview of our works on graphene field effect transistors (GFETs) on silicon carbide (SiC) substrate. The multilayer graphene was synthesized by thermal decomposition of Si-face silicon carbide (SiC). The GFET was fabricated, based on an array of parallel graphene nano ribbons (GNRs). The impact of the number of graphene layers on device performance was explored. It was found that with the reduction of the layer number from 10 to 5, a significant improvement of DC characteristics and HF performance can be observed. Exploration of HF performance of these devices versus temperature and nanoribbon density are also achieved, showing the strong dependence of temperature on device performance. A high intrinsic current gain cut-off frequency of 60 GHz is reported, and, more importantly for HF applications, the maximum oscillation frequency of 28 GHz is obtained.