• DocumentCode
    558449
  • Title

    Impact of surface recombination on the responsivity of GaAs- and InP-based heterojunction photo-transistors

  • Author

    Khan, Hassan A. ; Rezazadeh, Ali A.

  • Author_Institution
    Dept. of Electr. Eng., Lahore Univ. of Manage. Sci. (LUMS), Lahore, Pakistan
  • fYear
    2011
  • fDate
    10-11 Oct. 2011
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    We outlined a detailed analytical model for responsivity of heterojunction phototransistors (HPTs). The model has been used to analyse responsivity of Al0.3Ga0.7As/GaAs and InP/In0.47Ga0.53As HPT devices. Detailed analysis on surface recombination was performed and it has been observed that the recombination was higher for graded GaAs-based devices compared to InP-based devices lattice matched to In0.47Ga0.53As. In addition, Surface recombination parameter was higher at smaller incident wavelengths for both material systems and a detailed analysis on this parameter is provided in this work.
  • Keywords
    gallium arsenide; indium compounds; phototransistors; GaAs; InP; analytical model; heterojunction phototransistors; material systems; surface recombination; Gallium arsenide; Indium phosphide; Optical fibers; Optical surface waves; Silicon; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2011 European
  • Conference_Location
    Manchester
  • Print_ISBN
    978-1-61284-236-3
  • Type

    conf

  • Filename
    6102767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=558449