Title :
Characterization of GaN and GaAs FETs through a new pulsed measurement system
Author :
Santarelli, Alberto ; Cignani, Rafael ; Niessen, Daniel ; D´Angelo, Sara ; Traverso, Pier Andrea ; Filicori, Fabio
Author_Institution :
Dept. of Electron., Univ. of Bologna, Bologna, Italy
Abstract :
The paper introduces a new pulsed measurement system for the characterization of thermal and charge trapping effects in compound semiconductor III-V FETs. Minimization of reflections are obtained by pulse generation in a 50 Ω environment and separation between DC and AC path guarantees no variations of the average voltage values of pulses. Both GaAs- and GaN-based FETs are characterized and some differences between the two technologies are outlined as far as the charge trapping behaviour is concerned.
Keywords :
III-V semiconductors; electron traps; field effect transistors; gallium arsenide; gallium compounds; hole traps; pulse generators; pulse measurement; semiconductor device testing; wide band gap semiconductors; FET; GaAs; GaN; charge trapping effect; pulse generation; pulsed measurement system; thermal effect;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
