Title :
X-band internally harmonic controlled GaN HEMT amplifier with 57% power added efficiency
Author :
Yamanaka, K. ; Morimoto, T. ; Chaki, S. ; Nakayama, M. ; Hirano, Y.
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
In this paper, an X-band internally-matched GaN HEMT high efficiency amplifier is presented, which is equipped with second harmonic control circuits to enhance the efficiency of the GaN HEMT. The internal matching circuit was designed so that the 2nd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 57% was successfully obtained with 12.5W output power at X-band. This is the state-of-the-art high efficiency for X-band GaN HEMT amplifiers with more than 10W output power to the best of our knowledge.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave amplifiers; wide band gap semiconductors; GaN; X-band internally harmonic controlled HEMT amplifier; efficiency 57 percent; internal matching circuit; power 12.5 W; power added efficiency; second harmonic control circuits; Gallium nitride; HEMTs; Harmonic analysis; Load modeling; Power amplifiers; Power generation; Reflection;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
