Title :
Using the best linear approximation to model the nonlinear behavior of supply modulated amplifiers
Author :
Thorsell, Mattias ; Andersson, Kristoffer ; Pailloncy, Guillaume ; Rolain, Yves
Author_Institution :
GigaHertz Centre, Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
The nonlinear distortion in supply modulated amplifiers is thoroughly characterized in this paper. An LSNA with a low frequency test set extension is used to simultaneously measure the spectrum around DC and around the RF carrier. The characterization allows for classification of the nonlinear distortion and to determine the relative influence of different paths. The best linear approximation is measured and used to estimate the response of the supply modulated GaN HEMT.
Keywords :
HEMT integrated circuits; III-V semiconductors; amplifiers; approximation theory; gallium compounds; nonlinear distortion; GaN; RF carrier; large signal network analyzer; linear approximation; low frequency test set extension; nonlinear behavior; nonlinear distortion classification; response estimation; spectrum measurement; supply modulated GaN HEMT; supply modulated amplifier; Distortion measurement; Frequency measurement; Frequency modulation; Noise measurement; Nonlinear distortion; Radio frequency;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
