Using the best linear approximation to model the nonlinear behavior of supply modulated amplifiers

Author

Thorsell, Mattias ; Andersson, Kristoffer ; Pailloncy, Guillaume ; Rolain, Yves

Author_Institution

GigaHertz Centre, Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

324

Lastpage

327

Abstract

The nonlinear distortion in supply modulated amplifiers is thoroughly characterized in this paper. An LSNA with a low frequency test set extension is used to simultaneously measure the spectrum around DC and around the RF carrier. The characterization allows for classification of the nonlinear distortion and to determine the relative influence of different paths. The best linear approximation is measured and used to estimate the response of the supply modulated GaN HEMT.

Keywords

HEMT integrated circuits; III-V semiconductors; amplifiers; approximation theory; gallium compounds; nonlinear distortion; GaN; RF carrier; large signal network analyzer; linear approximation; low frequency test set extension; nonlinear behavior; nonlinear distortion classification; response estimation; spectrum measurement; supply modulated GaN HEMT; supply modulated amplifier; Distortion measurement; Frequency measurement; Frequency modulation; Noise measurement; Nonlinear distortion; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102795