DocumentCode :
558483
Title :
A highly efficient octave bandwidth high power amplifier in GaN technology
Author :
Cipriani, Elisa ; Colantonio, Paolo ; Paolo, Franco Di ; Giannini, Franco ; Giofrè, Rocco ; Diciomma, Rossella ; Orobello, Barbara ; Papi, Marco
Author_Institution :
Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome, Italy
fYear :
2011
fDate :
10-11 Oct. 2011
Firstpage :
188
Lastpage :
191
Abstract :
This contribution describes the design and validation of a L-band hybrid high power amplifier for radar application with high power added efficiency (PAE). The HPA is designed using a commercial GaN device by Cree, in a single ended configuration, starting from a simulated load-pull approach. Pulsed measurements of the designed PA demonstrate 90 W of saturated output power across the desired bandwidth with an average PAE of 50%.
Keywords :
III-V semiconductors; power amplifiers; pulse measurement; radar; wide band gap semiconductors; GaN; HPA; PAE; high efficient octave bandwidth high power amplifier; high power added efficiency; power 90 W; radar application; simulated load-pull approach; single ended configuration; Bandwidth; Frequency measurement; Gain; Gallium nitride; Power generation; Power measurement; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
Type :
conf
Filename :
6102804
Link To Document :
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