DocumentCode :
558484
Title :
A novel small PHEMT LNA that integrates active matching for 1 to 20GHz and 1.1dB NF performance
Author :
Morkner, Henrik ; Kennan, Wayne ; Niedzwiecki, Tony ; Galla, Tim
Author_Institution :
M/A-COM Technol. Solutions Lowell, Lowell, MA, USA
fYear :
2011
fDate :
10-11 Oct. 2011
Firstpage :
370
Lastpage :
373
Abstract :
This paper demonstrates a novel LNA (Low Noise Amplifier) design that utilizes active inter-stage and I/O matching to dramatically reduce size and increase performance over traditional inductor/capacitor matching. The results are dramatic when implemented on PHEMT GaAs where a 3 stage LNA is only .35 × .70mm yet covers 1 to 20 GHz. The LNA typically provides 20 dB gain, as low as 1.1dB NF and 12dB return loss across band. The die is small enough to be packaged in a 1.2×1.5 mm plastic QFN making it the smallest SMT amplifier known with this bandwidth and performance.
Keywords :
gallium arsenide; high electron mobility transistors; low noise amplifiers; microwave amplifiers; GaAs; I-O matching; PHEMT LNA; SMT amplifier; active inter-stage; active matching; frequency 1 GHz to 20 GHz; loss 12 dB; low noise amplifier design; noise figure 1.1 dB; plastic QFN; traditional inductor-capacitor matching; Capacitors; Gain; Impedance matching; Inductors; Noise measurement; PHEMTs; LNA; active match;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
Type :
conf
Filename :
6102805
Link To Document :
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