A novel small PHEMT LNA that integrates active matching for 1 to 20GHz and 1.1dB NF performance

Author

Morkner, Henrik ; Kennan, Wayne ; Niedzwiecki, Tony ; Galla, Tim

Author_Institution

M/A-COM Technol. Solutions Lowell, Lowell, MA, USA

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

370

Lastpage

373

Abstract

This paper demonstrates a novel LNA (Low Noise Amplifier) design that utilizes active inter-stage and I/O matching to dramatically reduce size and increase performance over traditional inductor/capacitor matching. The results are dramatic when implemented on PHEMT GaAs where a 3 stage LNA is only .35 × .70mm yet covers 1 to 20 GHz. The LNA typically provides 20 dB gain, as low as 1.1dB NF and 12dB return loss across band. The die is small enough to be packaged in a 1.2×1.5 mm plastic QFN making it the smallest SMT amplifier known with this bandwidth and performance.

Keywords

gallium arsenide; high electron mobility transistors; low noise amplifiers; microwave amplifiers; GaAs; I-O matching; PHEMT LNA; SMT amplifier; active inter-stage; active matching; frequency 1 GHz to 20 GHz; loss 12 dB; low noise amplifier design; noise figure 1.1 dB; plastic QFN; traditional inductor-capacitor matching; Capacitors; Gain; Impedance matching; Inductors; Noise measurement; PHEMTs; LNA; active match;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102805