X-band 200W AlGaN/GaN HEMT for high power application

Author

Nishihara, M. ; Yamamoto, T. ; Mizuno, S. ; Sano, S. ; Hasegawa, Y.

Author_Institution

Sumitomo Electr. Device Innovations, Inc., Showa, Japan

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

65

Lastpage

68

Abstract

A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists of four dies of 0.35 um-gate GaN HEMT of 16 mm gate periphery together with input and output 2-stage impedance transformers assembled into a low thermal resistance package. The developed GaN HEMT provides 204W output power and 12dB small signal gain at 9.3 GHz with power added efficiency of 32% under pulse condition at a duty of 10% with a pulse width of 100 usec.

Keywords

PWM invertors; aluminium compounds; gallium compounds; high electron mobility transistors; impedance convertors; thermal resistance; 2-stage impedance transformers; AlGaN-GaN; HEMT; X-band applications; efficiency 32 percent; frequency 9.3 GHz; gain 12 dB; gate periphery; high electron mobility transistor; high power application; output power; power 200 W; power 204 W; power added efficiency; pulse condition; pulse width; signal gain; size 0.35 mum; thermal resistance package; Aluminum gallium nitride; Gain; Gallium nitride; HEMTs; Logic gates; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102809