Title :
Scalable distributed small-signal millimeter-wave HEMT model
Author :
Hoque, M.E. ; Parker, Anthony E. ; Heimlich, Michael ; Tarazi, Jabra ; Mahon, Simon
Author_Institution :
Dept. of Electron. Eng., Macquarie Univ., Sydney, NSW, Australia
Abstract :
A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of lumped elements. The topology of these networks is determined such that a scalable set of parameters is obtained. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for a GaAs pHEMT and the correct topology derived such that simple scaling rules apply to the unit cell.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; millimetre wave field effect transistors; network topology; semiconductor device metallisation; semiconductor device models; GaAs; access metallization; distributed network; distributed small signal millimeter wave HEMT model; intrinsic unit cells; linear scalability; lumped elements; network topology; pHEMT; scalable HEMT model; HEMTs; Integrated circuit modeling; Logic gates; Network topology; Topology; Distributed parameter circuits; HEMTs; electromagnetic analysis; parameter extraction; semiconductor device modeling;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
