High performance GaN front-end MMICs

Key GaN HEMT front-end circuits for next generation AESA radar/EW applications are presented. The circuits are an S-band 20 W MMIC HPA reaching 50% measured PAE, a two-stage S-band MMIC LNA showing a measured NF of 1.3 dB, and a DC-18 GHz SPDTs showing a measured insertion loss of less than 2 dB at 18 GHz. Furthermore, a 2-18 GHz front-end circuit with a co-integrated two-stage LNA and a T/R-switch has been designed as an example of an integrated multi-functional GaN front-end circuit. The circuits were manufactured in the Chalmers AlGaN HEMT on SiC MMIC process. The process includes both 0.25 μm and 0.15 μm gate-length devices.