Title :
>41% efficient 10W envelope modulated LTE downlink power amplifier
Author :
Watkins, Gavin ; Zhou, Jiafeng ; Morris, Kevin
Author_Institution :
Toshiba Res. Eur. Ltd., Bristol, UK
Abstract :
In this paper envelope Modulation is applied to a class E RF power amplifier (PA). The class E PA is based around a GaN transistor and operates at 2GHz to achieve an efficiency of 74.4% at 11.5W output power (POUT) under continuous wave excitation. The envelope modulator consists of a Switched Mode Power Supply (SMPS) and a class G amplifier, resulting in a combined efficiency of 71.5%. In full Envelope Tracking (ET) mode a total system efficiency of 41.9% is achieve at 10.4W POUT when amplifying a 3MHz bandwidth 3GPP Long Term Evolution (LTE) signal. In Envelope Elimination and Restoration (EER) mode under these conditions the efficiency increases to 44.2% at 10.6W POUT.
Keywords :
HF amplifiers; UHF power amplifiers; UHF transistors; gallium compounds; 3GPP LTE signal; 3GPP Long Term Evolution signal; EER mode; ET mode; GaN; SMPS; bandwidth 3 MHz; class E RF PA; class E RF power amplifier; class G amplifier; continuous wave excitation; efficiency 41.9 percent; efficiency 44.2 percent; efficiency 71.5 percent; efficiency 74.4 percent; envelope elimination and restoration mode; envelope modulated LTE downlink power amplifier; envelope tracking mode; power 10 W; power 10.4 W; power 10.6 W; power 11.5 W; switched mode power supply; transistor; Frequency modulation; Peak to average power ratio; Power amplifiers; Power generation; Radio frequency; Switched-mode power supply; Class E; Class G; Envelope Elimination and Restoration (EER); Envelope Tracking (ET); Peak-to-Average Power Ratio (PAPR); Power Amplifier (PA); Switched Mode Power Supply (SMPS);
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
