GaN HEMT nonlinear characterization for wideband high-power amplifier design

The paper presents a low-cost technique for nonlinear characterization of active devices oriented to microwave power amplifier design. The approach is based on a recently proposed measurement technique which, by exploiting a direct low-frequency nonlinear electron device characterization in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves a similar level of accuracy provided by expensive nonlinear measurement setups operating at microwave frequencies. Different experiments on a power GaN FET have been carried out in a wide range of frequency to demonstrate the validity of the described technique.