A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate

Author

Bélenger, B. ; Espana, B. ; Courrèges, S. ; Blondy, P. ; Vendier, O. ; Langrez, D. ; Cazaux, J.-L.

Author_Institution

Thales Alenia Space, Toulouse, France

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

164

Lastpage

167

Abstract

In this paper, the design and measurements of a low-loss radiofrequency (RF) microelectromechanical (MEMS) 2-Bit Ka-Band monolithic Phase-Shifter for high-power application is presented. These micro-strip circuits are fabricated on a 0.254 mm-thick Sapphire substrate and are based on a reflection-type topology which uses 3-dB branch line couplers. The average insertion loss of the circuit is 1.8 dB with a return loss >;7 dB within the aimed frequency range [25.7-27] GHz.

Keywords

micromechanical devices; microstrip circuits; millimetre wave couplers; millimetre wave phase shifters; sapphire; substrates; Ka-band RF-MEMS; branch line couplers; frequency 25.7 GHz to 27 GHz; high-power phase shifter; loss 1.8 dB; microstrip circuits; radiofrequency microelectromechanical monolithic phase-shifter; reflection-type topology; sapphire substrate; size 0.254 mm; word length 2 bit; Insertion loss; Micromechanical devices; Microswitches; Phase measurement; Phase shifters; Radio frequency; Substrates; Microelectromechanical systems (MEMS); high-power; phase-shifters; switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102857