Title :
A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate
Author :
Bélenger, B. ; Espana, B. ; Courrèges, S. ; Blondy, P. ; Vendier, O. ; Langrez, D. ; Cazaux, J.-L.
Author_Institution :
Thales Alenia Space, Toulouse, France
Abstract :
In this paper, the design and measurements of a low-loss radiofrequency (RF) microelectromechanical (MEMS) 2-Bit Ka-Band monolithic Phase-Shifter for high-power application is presented. These micro-strip circuits are fabricated on a 0.254 mm-thick Sapphire substrate and are based on a reflection-type topology which uses 3-dB branch line couplers. The average insertion loss of the circuit is 1.8 dB with a return loss >;7 dB within the aimed frequency range [25.7-27] GHz.
Keywords :
micromechanical devices; microstrip circuits; millimetre wave couplers; millimetre wave phase shifters; sapphire; substrates; Ka-band RF-MEMS; branch line couplers; frequency 25.7 GHz to 27 GHz; high-power phase shifter; loss 1.8 dB; microstrip circuits; radiofrequency microelectromechanical monolithic phase-shifter; reflection-type topology; sapphire substrate; size 0.254 mm; word length 2 bit; Insertion loss; Micromechanical devices; Microswitches; Phase measurement; Phase shifters; Radio frequency; Substrates; Microelectromechanical systems (MEMS); high-power; phase-shifters; switches;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
