A scalable X-parameter model for GaAs and GaN FETs

Author

Leckey, J.G.

Author_Institution

M/A-COM Technol. Solutions, Belfast, UK

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

13

Lastpage

16

Abstract

A new nonlinear FET model formulation is proposed which comprises an X-parameter (S-function or Poly Harmonic Distortion) intrinsic model combined with lumped extrinsic circuit model shells This enables the correct gate width scaling of the intrinsic and extrinsic model by finger number and unit gate width. An extraction technique is described based on de-embedding the X-parameters to the intrinsic plane. A verification example of scaling of a 10×90um 0.15um pHEMT X-parameter model (generated from a scalable compact model) down to a 4×50um device (a factor of 4.5), is shown without loss of accuracy in power sweep and loadpull contour results compared to the reference compact model simulation.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; lumped parameter networks; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; GaAs; GaN; S-function intrinsic model; X-parameter deembedding; extraction technique; finger number; gate width scaling; loadpull contour; lumped extrinsic circuit model shells; nonlinear FET model; pHEMT X-parameter model; polyharmonic distortion intrinsic model; power sweep; scalable X-parameter model; size 0.15 mum; unit gate width; Integrated circuit modeling; Load modeling; Logic gates; Mathematical model; Microwave measurements; PHEMTs; MMIC Power Amplifiers; Nonlinear Model; Poly Harmonic Distortion; X-parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102868