Title :
A 60 GHz four channel beamforming transmitter in 0.25 μm SiGe BiCMOS technology
Author :
Elkhouly, M. ; Glisic, S. ; Ellinger, F. ; Schyett, J.C.
Author_Institution :
Circuit Design Dept., IHP Microelectron., Frankfurt (Oder), Germany
Abstract :
A four channel 60 GHz beamforming transmitter based on an RF phase shifting architecture is developed fabricated in a SiGe BiCMOS process. The transmitter includes an integrated 48 GHz frequency synthesizer, an up-conversion mixer, and a fully differential millimeter-wave power division and distribution network. Each channel consists of a 2 bit digitally controlled phase shifter and a high power amplifier. The transmitter has approximately 17 dB conversion gain per channel. The maximum saturated RF output power is 15.8 dBm. Each channel dissipates 600 mW.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; array signal processing; digital control; frequency response; frequency synthesizers; microwave phase shifters; millimetre wave power amplifiers; 2 bit digitally controlled phase shifter; RF phase shifting architecture; SiGe; SiGe BiCMOS technology; conversion gain per channel; differential millimeter-wave power division network; distribution network; four channel beamforming transmitter; frequency 60 GHz; frequency synthesizer; high power amplifier; size 0.25 mum; up-conversion mixer; Array signal processing; Frequency measurement; Gain; Mixers; Phase shifters; Power amplifiers; Radio frequency; 60 GHz; beamforming; millimeter-wave; up-conversion;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
