Title :
Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology
Author :
Peroni, Marco ; Nanni, Antonio ; Romanin, P. ; Dominijanni, Donatella ; Notargiacomo, A. ; Giovine, E. ; Ciccognani, Walter ; Colangeli, Sergio
Author_Institution :
Eng. Div. - R&D, SELEX Sist. Integrati S.p.A., Rome, Italy
Abstract :
In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250nm) process with complementary integration of a Schottky Field Plate (FP) is presented. The characterization results are compared between different Gate Lengths and FP topologies configurations, fabricated on the same wafer. In particular, remarkable low noise performances (NFmin=0.87dB, GASS=10.5dB @ 10GHz) have been measured with an LG=250nm device without FP, while with the additional FP protection a minimum NFmin=1.5dB and GASS=13.5dB have been reached.
Keywords :
gallium compounds; high electron mobility transistors; innovation management; FP topology configuration; GaN; Schottky field plate; complementary integration; field plate technology; innovative GaN HEMT technology; low noise performances; scalable gate jength; scalable subquarter-micron GaN HEMT; Gallium nitride; HEMTs; Logic gates; Noise; Noise measurement; Performance evaluation; Radio frequency; Gallium nitride; HEMTs; Noise figure; Robustness;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
