Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology

Author

Peroni, Marco ; Nanni, Antonio ; Romanin, P. ; Dominijanni, Donatella ; Notargiacomo, A. ; Giovine, E. ; Ciccognani, Walter ; Colangeli, Sergio

Author_Institution

Eng. Div. - R&D, SELEX Sist. Integrati S.p.A., Rome, Italy

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

344

Lastpage

347

Abstract

In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250nm) process with complementary integration of a Schottky Field Plate (FP) is presented. The characterization results are compared between different Gate Lengths and FP topologies configurations, fabricated on the same wafer. In particular, remarkable low noise performances (NF_min=0.87dB, G_ASS=10.5dB @ 10GHz) have been measured with an L_G=250nm device without FP, while with the additional FP protection a minimum NF_min=1.5dB and G_ASS=13.5dB have been reached.

Keywords

gallium compounds; high electron mobility transistors; innovation management; FP topology configuration; GaN; Schottky field plate; complementary integration; field plate technology; innovative GaN HEMT technology; low noise performances; scalable gate jength; scalable subquarter-micron GaN HEMT; Gallium nitride; HEMTs; Logic gates; Noise; Noise measurement; Performance evaluation; Radio frequency; Gallium nitride; HEMTs; Noise figure; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102874