DocumentCode :
558561
Title :
Novel realisation of a broadband high-efficiency continuous class-F power amplifier
Author :
Tuffy, Neal ; Zhu, Anding ; Brazil, Thomas J.
Author_Institution :
RF & Microwave Res. Group, Univ. Coll. Dublin, Dublin, Ireland
fYear :
2011
fDate :
10-11 Oct. 2011
Firstpage :
120
Lastpage :
123
Abstract :
This work outlines the analysis and design procedure employed for the realisation of a broadband Continuous Class-F power amplifier. Waveform analysis is used in determining the most sensitive parameters for maintaining high efficiency over a desired bandwidth. A design methodology is then employed for control of the dominant parameters over the band of interest, while preserving maximum fundamental output power. By using a commercially available GaN Cree 10W HEMT transistor, an amplifier was fabricated which is operational over a 20% bandwidth. Greater than 11.4W of output power is found with efficiencies between 65-76% measured over the band from 2.15-2.65GHz. An average drain efficiency of 70.5% and PAE of 65% is obtained with a corresponding average output power of 13.5W.
Keywords :
HEMT circuits; III-V semiconductors; UHF power amplifiers; gallium compounds; network analysis; network synthesis; wide band gap semiconductors; wideband amplifiers; GaN; HEMT transistor; broadband high efficiency power amplifier; class F power amplifier; design methodology; dominant parameter; efficiency 65 percent to 76 percent; frequency 2.15 GHz to 2.65 GHz; power 10 W; power 13.5 W; sensitive parameter; waveform analysis; Bandwidth; Broadband amplifiers; Gallium nitride; Harmonic analysis; Impedance; Power amplifiers; Class-F; Power Amplifier; broadband; high efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
Type :
conf
Filename :
6102882
Link To Document :
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