The impact of uniaxial strain on flicker noise and random telegraph noise of SiC strained nMOSFETs in 40nm CMOS technology

The impact of uniaxial strain on flicker noise and random telegraph noise (RTN) was investigated in frequency and time domains, respectively. Both control and SiC strained nMOS reveal flicker noise dominated by number fluctuation model but the latter one with uniaxial strain suffers significantly higher noise. RTN measured from SiC strained nMOS features a complex spectrum with multi-level drain current fluctuation amplitudes. The capture time (t_c), emission time (x_e), and effective trap depth (Z_eff) can be extracted to explore the impact from the uniaxial strain on trap properties, RTN, and flicker noise.