DocumentCode :
559582
Title :
Accurate thermal characterization of power semiconductor packages by thermal simulation and measurements
Author :
Vass-Varnai, Andras ; Bornoff, Robin ; Ress, Sandor ; Sarkany, Zoltan ; Hodossy, Sandor ; Rencz, Marta
Author_Institution :
Budapest Univ. of Technol. & Econ., Budapest, Hungary
fYear :
2011
fDate :
11-13 May 2011
Firstpage :
324
Lastpage :
329
Abstract :
In this paper the possibility of generating a compact thermal model based on thermal transient measurements is discussed and evaluated. A case study of a power diode in a cylindrical-shaped copper package is shown. The detailed model of the package is built and simulated in a CFD based thermal simulator software. The measurement results are compared to the results of the simulations and after some model refinement we found good agreement. The compact model of the package is also identified based on the structure functions generated from the real measurement. The case-node is determined using the standard dual-interface method. The resulting compact model has proven to be a perfect representation of the real package as the structure functions generated based on measurements and corresponding simulation results match perfectly.
Keywords :
computational fluid dynamics; power semiconductor diodes; thermal management (packaging); CFD; case-node; compact thermal model; cylindrical-shaped copper package; dual-interface method; power diode; power semiconductor packages; structure function; thermal characterization; thermal measurement; thermal simulation; thermal simulator software; thermal transient measurement; Heating; Semiconductor device measurement; Semiconductor diodes; Temperature measurement; Thermal resistance; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2011 Symposium on
Conference_Location :
Aix-en-Provence
Print_ISBN :
978-1-61284-905-8
Type :
conf
Filename :
6107991
Link To Document :
بازگشت