• DocumentCode
    559622
  • Title

    Studies of optical and crystal properties of ALD grown ZnO

  • Author

    Elam, David ; Nemashkalo, Anastasiia ; Strzhemechny, Yuri ; Chen, Chonglin ; Ayon, Arturo ; Chabanov, Andrey

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Texas San Antonio, San Antonio, TX, USA
  • fYear
    2011
  • fDate
    11-13 May 2011
  • Firstpage
    185
  • Lastpage
    186
  • Abstract
    In this paper, we report structural and photoluminescence properties of ZnO thin films grown on single crystal ZnO substrates by means of Atomic Layer Deposition (ALD).
  • Keywords
    II-VI semiconductors; atomic layer deposition; crystal structure; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; atomic layer deposition; crystal properties; optical properties; photoluminescence; single crystal substrates; thin films; Doping; Films; Lattices; Substrates; X-ray diffraction; X-ray scattering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2011 Symposium on
  • Conference_Location
    Aix-en-Provence
  • Print_ISBN
    978-1-61284-905-8
  • Type

    conf

  • Filename
    6108034
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=559622