Title :
Lasing behavior analysis in GaN-based 2D Photonic Crystal Surface Emitting Lasers with localized defect
Author :
Wu, Tzeng-Tsong ; Weng, Peng-Shiang ; Hou, Yen-Ju ; Lin, You-Ching ; Chen, Chi-Cheng ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonic & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
Oct. 30 2011-Nov. 2 2011
Abstract :
The GaN-based two-dimensional (2D) Photonic Crystal Surface Emitting Lasers (PCSELs) with different type of localized defect have been fabricated and investigated. According to the different cavity sizes, the threshold energy density and lasing wavelength of PCSELs could be investigated by micro-Photoluminescence (μ-PL) system. Besides, by using the Multiple Scattering Method, the threshold gain of different defect cavities of PCSELs could be calculated precisely and well matched to the experimental results.
Keywords :
III-V semiconductors; gallium compounds; laser cavity resonators; photoluminescence; photonic crystals; surface emitting lasers; wide band gap semiconductors; 2D photonic crystal surface emitting lasers; GaN; cavity sizes; defect cavities; lasing behavior analysis; localized defect; micro-photoluminescence system; multiple scattering method; threshold energy density; threshold gain; GaN; Multiple Scattering Method; photonic crystal; surface emitting laser;
Conference_Titel :
Microopics Conference (MOC), 2011 17th
Conference_Location :
Sendai
Print_ISBN :
978-1-4577-1344-6
