Quantum well mach-zehnder modulator with single microring resonator and optimized arm length

Author

Kaneshige, Hiroki ; Ueyama, Yuta ; Yamada, Hitoshi ; Arakawa, Taro ; Kokubun, Yasuo

Author_Institution

Grad. Sch. of Eng., Yokohama Nat. Univ., Yokohama, Japan

fYear

2011

fDate

Oct. 30 2011-Nov. 2 2011

Firstpage

1

Lastpage

2

Abstract

We propose and demonstrate a low-voltage InGaAs/InAlAs multiple quantum well Mach-Zehnder (MZ) modulator with a single microring resonator and an arm with an optimized length. The quantum well wafer was grown by molecular beam epitaxy and the device structure was fabricated by photolithography and dry etching processes. The half-wave voltage was successfully reduced to one- fourth compared to a conventional MZ modulator.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; micro-optomechanical devices; microfabrication; micromechanical resonators; molecular beam epitaxial growth; optical fabrication; optical modulation; photolithography; quantum well devices; semiconductor quantum wells; InGaAs-InAlAs; device structure; dry etching; half-wave voltage; molecular beam epitaxy; optimized arm length; photolithography; quantum well Mach-Zehnder modulator; quantum well wafer; single microring resonator; Phase modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microopics Conference (MOC), 2011 17th

Conference_Location

Sendai

Print_ISBN

978-1-4577-1344-6

Type

conf

Filename

6110289