DocumentCode :
559736
Title :
Quantum well mach-zehnder modulator with single microring resonator and optimized arm length
Author :
Kaneshige, Hiroki ; Ueyama, Yuta ; Yamada, Hitoshi ; Arakawa, Taro ; Kokubun, Yasuo
Author_Institution :
Grad. Sch. of Eng., Yokohama Nat. Univ., Yokohama, Japan
fYear :
2011
fDate :
Oct. 30 2011-Nov. 2 2011
Firstpage :
1
Lastpage :
2
Abstract :
We propose and demonstrate a low-voltage InGaAs/InAlAs multiple quantum well Mach-Zehnder (MZ) modulator with a single microring resonator and an arm with an optimized length. The quantum well wafer was grown by molecular beam epitaxy and the device structure was fabricated by photolithography and dry etching processes. The half-wave voltage was successfully reduced to one- fourth compared to a conventional MZ modulator.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; micro-optomechanical devices; microfabrication; micromechanical resonators; molecular beam epitaxial growth; optical fabrication; optical modulation; photolithography; quantum well devices; semiconductor quantum wells; InGaAs-InAlAs; device structure; dry etching; half-wave voltage; molecular beam epitaxy; optimized arm length; photolithography; quantum well Mach-Zehnder modulator; quantum well wafer; single microring resonator; Phase modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microopics Conference (MOC), 2011 17th
Conference_Location :
Sendai
Print_ISBN :
978-1-4577-1344-6
Type :
conf
Filename :
6110289
Link To Document :
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