DocumentCode :
55994
Title :
Reliable 3-D Clock-Tree Synthesis Considering Nonlinear Capacitive TSV Model With Electrical–Thermal–Mechanical Coupling
Author :
Sai, Manoj P. D. ; Hao Yu ; Yang Shang ; Chuan Seng Tan ; Sung Kyu Lim
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
32
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
1734
Lastpage :
1747
Abstract :
A robust physical design of 3-D IC requires investigation on through-silicon via (TSV). The large temperatures and stress gradients can severely affect TSV delay with large variation. The traditional physical model treats TSV as a resistor with linear electrical-thermal dependence, which ignores the fundamental device physics. In this paper, a physics-based electrical-thermal-mechanical delay model is developed for signal TSVs in 3-D IC. With consideration of liner material and also stress, a nonlinear model is established between electrical delay with temperature and stress. Moreover, sensitivity analysis is performed to relate the reduction of temperature and stress gradients with respect to dummy TSVs insertion. Taking the design of 3-D clock tree as a case study, we have formulated a nonlinear optimization problem for clock-skew reduction. By allocating dummy TSVs to reduce the temperature and stress gradients, the clock skew introduced by signal TSVs and drivers can be minimized. A number of 3-D clock-tree benchmarks are utilized in experiments. We have observed that with the use of dummy TSV insertion, clock skew can be reduced by 61.3% on average when the accurate nonlinear electrical-thermal-mechanical delay model is applied.
Keywords :
clocks; optimisation; resistors; three-dimensional integrated circuits; trees (mathematics); 3D IC; 3D clock-tree synthesis; clock-skew reduction; electrical-thermal-mechanical coupling; electrical-thermal-mechanical delay; linear electrical-thermal dependence; nonlinear capacitive TSV model; nonlinear optimization problem; resistor; robust physical design; stress gradient; temperatures gradient; through-silicon via; Clocks; Couplings; Delays; Integrated circuit modeling; Solid modeling; Stress; Through-silicon vias; Clock-skew reduction; TSV stress; electrical-thermal–mechanical coupling; nonlinear MOSCAP; stress gradient; temperature gradient; thermal TSV; through-silicon via (TSV);
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2013.2270285
Filename :
6634568
Link To Document :
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