DocumentCode :
56023
Title :
Extraction of Channel Electron Effective Mobility in InGaAs/Al _{\\bf 2} O _{\\bf 3} n-FinFETs
Author :
Yaodong Hu ; Shengwei Li ; Guangfan Jiao ; Wu, Y.Q. ; Daming Huang ; Ye, Peide D. ; Ming-Fu Li
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Volume :
12
Issue :
5
fYear :
2013
fDate :
Sept. 2013
Firstpage :
806
Lastpage :
809
Abstract :
A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0.53Ga0.47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility μn is around 370 cm2/V·s at low Vg - Vth bias at room temperature and decreases with increasing Vg, and increases with increasing temperature (240-332K). It is very different from the case of Si n-MOSFETs, where the electron mobility decreases with increasing temperature. The low channel effective mobility and the ab-normal temperature dependence of μn are ascribed to the high acceptor interface trap and border trap energy densities in the conduction band energy of InGaAs. The ballistic channel resistance RBall at low Vds is calculated and compared with the measured channel resistance RCH. The low transmission coefficient T = RBall/RCH ≈ 0.06 to 0.05 indicates that there is a large room to improve the InGaAs/Al2O3 n-FinFET performance.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; ballistic transport; conduction bands; electron mobility; gallium arsenide; indium compounds; In0.53Ga0.47As-Al2O3; Si; Si n-MOSFET; ab-normal temperature dependence; acceptor interface trap; ballistic channel resistance; channel electron effective mobility; conduction band energy; extracted electron effective mobility; multiple subbands quasiballistic transport; temperature 293 K to 298 K; transmission coefficient; trap energy density; tri-gate n-FinFET; Aluminum oxide; Indium gallium arsenide; Logic gates; MOSFET; Quantum capacitance; Temperature measurement; Al$_{2}$O$_{3}$ ; FinFETs; InGaAs; mobility; nano scale transistor; quasi-ballistic transport;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2274282
Filename :
6566193
Link To Document :
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