Electromagnetic susceptibility of low frequency bipolar transistors subject to the total ionizing dose effect

Space or military electronic devices are subject to both electromagnetic fields and total ionizing dose. The reliability of a discrete low frequency transistor is addressed by means of electromagnetic susceptibility measurements after total ionizing dose. The bipolar transistors under test are subject to high frequency interferences in the near-field zone with 100MHz-1.5GHz signals. For comparison, the electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in a common emitter configuration. The goal is to predict the reliability of simple devices on a mission time scale.