DocumentCode :
560488
Title :
Local electromagnetic coupling with CMOS integrated circuits
Author :
Poucheret, F. ; Chusseau, L. ; Robisson, B. ; Maurine, P.
Author_Institution :
LIRMM, Montpellier, France
fYear :
2011
fDate :
6-9 Nov. 2011
Firstpage :
137
Lastpage :
141
Abstract :
This paper gives experimental evidences of how a local electromagnetic coupling can be created between a micro-antenna and the buried Power Ground Network (PGN) of a 350nm VLSI circuit; the PGN being integrated in Metal 1, the deepest metal layer available in the considered technology. The local EM injection method applied to create this coupling is introduced in this paper even if it presents some similarities with direct power injection.
Keywords :
CMOS integrated circuits; VLSI; electromagnetic coupling; CMOS integrated circuit; EM injection method; PGN; VLSI circuit; direct power injection; electromagnetic coupling; microantenna; power ground network; size 350 nm; Conferences; Couplings; Electromagnetic compatibility; Integrated circuits; Metals; Probes; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility of Integrated Circuits (EMC Compo), 2011 8th Workshop on
Conference_Location :
Dubrovnik
Print_ISBN :
978-1-4577-0862-6
Type :
conf
Filename :
6130082
Link To Document :
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