Title :
140–220-GHz DHBT Detectors
Author :
Vassilev, Vessen ; Zirath, Herbert ; Kozhuharov, Rumen ; Lai, S.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
This paper discusses G -band (140-220 GHz) detectors based on a 250-nm InP-InGaAs-InP double heterojunction bipolar transistor process available from the Teledyne Scientific Company. Two types of detectors are presented-a passive detector where the transistor´s base-emitter junction nonlinearity is used, and an active detector, where the transistor transconductance nonlinearity is used for detection. Measurements of transistor noise-power spectrum density at low frequencies is used to model and predict the noise equivalent power (NEP) of the detectors. Analysis of responsivity and noise is presented and compared with measurements. Both configurations are analyzed and compared in terms of noise-voltage, responsivity and NEP. The conclusion that the passive detector offers lower NEP is analyzed and explained.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave detectors; DHBT detectors; G-band detectors; InP-InGaAs-InP; NEP; active detector; double heterojunction bipolar transistor process; frequency 140 GHz to 220 GHz; noise analysis; noise equivalent power prediction; passive detector; responsivity analysis; size 250 nm; transistor base-emitter junction nonlinearity; transistor noise-power spectrum density measurements; transistor transconductance nonlinearity; $G$-band; Double heterojunction bipolar transistor (DHBT); InP; flicker noise; monolithic microwave integrated circuit (MIMIC); noise equivalent power (NEP); passive imaging; power detectors; radiometers; receivers; remote sensing; responsivity;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2013.2259250
