• DocumentCode
    560678
  • Title

    Notice of Retraction
    Design of non-ferromagnetic reactor IGBT circuit

  • Author

    Chang Cai ; Pengxiang Xing ; Yanting Shi

  • Author_Institution
    Sch. of Electr. Eng., Wuhan Univ., Wuhan, China
  • Volume
    1
  • fYear
    2011
  • fDate
    8-9 Sept. 2011
  • Firstpage
    428
  • Lastpage
    431
  • Abstract
    Notice of Retraction

    After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE´s Publication Principles.

    We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.

    The presenting author of this paper has the option to appeal this decision by contacting TPII@ieee.org.

    This paper designs non-ferromagnetic reactor based on the concept of nullator and norator. Nullator and norator are used to equivalently represent Insulated Gate Bipolar Transistor (IGBT) device and to design voltage-reverse and current-reverse reactors of fixed frequency. According to IDBT´s characteristic that it can be equivalent to the fixed connection of nullator and norator, the equivalent transformation of voltage-reverse and current-reverse reactors is made and in this way principle circuit of voltage-reverse and current-reverse reactors of fixed frequency can be realized by the circuit consists of IGBT device. Thus voltage-reverse and current-reverse reactors in which only capacitors and IGBT devices are involved are designed. Simulation analysis is taken on Multisim. According to the simulation, phase angles of both reactors´ input current lag 90° behind phase angles of their input voltage, so voltage-reverse and current-reverse reactors meet the characteristics of reactors and they are able to replace ferromagnetic reactors in some fields.
  • Keywords
    ferromagnetic materials; insulated gate bipolar transistors; IDBT characteristic; current-reverse reactors; equivalent transformation; insulated gate bipolar transistor device; nonferromagnetic reactor IGBT circuit; voltage-reverse; Analytical models; Capacitors; Inductors; Insulated gate bipolar transistors; Integrated circuit modeling; Reactive power; IGBT device; non-ferromagnetic; norator; nullator; reactor; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Engineering and Automation Conference (PEAM), 2011 IEEE
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-9691-4
  • Type

    conf

  • DOI
    10.1109/PEAM.2011.6134887
  • Filename
    6134887