Inkjet-Printed Oxide Thin-Film Transistors Using Double-Active Layer Structure

Author

Seung-Hyun Lee ; Woon-Seop Choi

Author_Institution

Dept. of Display Eng., Hoseo Univ., Asan, South Korea

Volume

11

Issue

9

fYear

2015

fDate

Sept. 2015

Firstpage

698

Lastpage

702

Abstract

Inkjet-printed oxide thin-film transistors (TFTs) with a double-active layer structure were prepared to achieve better electrical properties and bias stability. The active layer was composed of an inkjet-printed In₂O₃ layer on top of an inkjet-printed zinc-tin oxide with various In₂O₃ ratios. The best electrical properties of the inkjet-printed double-active layer ZTO TFTs were obtained with 0.01 M of In₂O₃: a mobility of 8.6 cm²/V s, a threshold voltage of 2.76 V, a subthreshold slope of 0.52 V/dec, and an on-to-off current ratio > 10⁶. The electrical properties of the inkjet-printed double-active layer oxide TFTs were superior to those of the single-active layered TFTs.

Keywords

indium compounds; ink jet printing; semiconductor materials; semiconductor thin films; thin film transistors; In₂O₃; bias stability; double-active layer structure; electrical properties; inkjet-printed oxide thin-film transistors; on-off current ratio; Films; Rough surfaces; Surface roughness; Surface treatment; Thermal stability; Thin film transistors; Threshold voltage; $hbox{In}_{2} hbox{O} _{3}$; Double-active layer; ZTO; inkjet; oxide TFTs;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2430848

Filename

7103281