Title :
Inkjet-Printed Oxide Thin-Film Transistors Using Double-Active Layer Structure
Author :
Seung-Hyun Lee ; Woon-Seop Choi
Author_Institution :
Dept. of Display Eng., Hoseo Univ., Asan, South Korea
Abstract :
Inkjet-printed oxide thin-film transistors (TFTs) with a double-active layer structure were prepared to achieve better electrical properties and bias stability. The active layer was composed of an inkjet-printed In2O3 layer on top of an inkjet-printed zinc-tin oxide with various In2O3 ratios. The best electrical properties of the inkjet-printed double-active layer ZTO TFTs were obtained with 0.01 M of In2O3: a mobility of 8.6 cm2/V s, a threshold voltage of 2.76 V, a subthreshold slope of 0.52 V/dec, and an on-to-off current ratio > 106. The electrical properties of the inkjet-printed double-active layer oxide TFTs were superior to those of the single-active layered TFTs.
Keywords :
indium compounds; ink jet printing; semiconductor materials; semiconductor thin films; thin film transistors; In2O3; bias stability; double-active layer structure; electrical properties; inkjet-printed oxide thin-film transistors; on-off current ratio; Films; Rough surfaces; Surface roughness; Surface treatment; Thermal stability; Thin film transistors; Threshold voltage; $hbox{In}_{2} hbox{O} _{3}$; Double-active layer; ZTO; inkjet; oxide TFTs;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2015.2430848
