Notice of RetractionAnalysis of low-electrode displacement effect on standard high-voltage compressed gas capacitor

Notice of Retraction

After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE´s Publication Principles.

We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.

The presenting author of this paper has the option to appeal this decision by contacting TPII@ieee.org.

Accurate high-voltage capacitance given by high-voltage compressed gas capacitors requires the use of the device which is difficult to calibrate since SF6 filled in the capacitors is noxious. Due to standards the high-voltage compressed gas capacitors usually be considered, their characteristics such as absolute value of capacitance, temperature, gas pressure and voltage dependence should be known accurately and make sure with the errors of less than 3 ppm related to the rated value of capacitance. The traditional analytical methods on these properties are through physical experiments. This paper mainly focuses on the variation of low-electrode position in high-voltage compressed gas capacitors with the aid of numerical method of finite element method (FEM). In this paper a numerical simulation model is established on a 300kV commercial high-voltage compressed gas capacitor and the accuracy of FEM simulation is analyzed firstly. Then we discussed the reasons leading to the problems of low-electrode displacement. Finally, based on the simulation model, the capacitance changing with the position of the low-electrode is analyzed.