Title :
Inverse Class-F Design Using Dynamic Loadline GaN HEMT Models to Help Designers Optimize PA Efficiency [Application Notes]
Author :
Pengelly, Raymond S. ; Pribble, William ; Smith, Tim
Author_Institution :
Cree Inc., Research Triangle Park, NC, USA
Abstract :
Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Keywords :
III-V semiconductors; circuit optimisation; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; PA efficiency; circuit optimization; dynamic loadline HEMT models; inverse class-F power amplifier design; small cell systems; wireless base station; wireless transmission standards; Base stations; HEMT; Harmonic analysis; Integrated circuit modeling; Load modeling; Power amplifiers; Time-frequency analysis;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2014.2333431
