DocumentCode
56083
Title
Inverse Class-F Design Using Dynamic Loadline GaN HEMT Models to Help Designers Optimize PA Efficiency [Application Notes]
Author
Pengelly, Raymond S. ; Pribble, William ; Smith, Tim
Author_Institution
Cree Inc., Research Triangle Park, NC, USA
Volume
15
Issue
6
fYear
2014
fDate
Sept.-Oct. 2014
Firstpage
134
Lastpage
147
Abstract
Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Keywords
III-V semiconductors; circuit optimisation; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; PA efficiency; circuit optimization; dynamic loadline HEMT models; inverse class-F power amplifier design; small cell systems; wireless base station; wireless transmission standards; Base stations; HEMT; Harmonic analysis; Integrated circuit modeling; Load modeling; Power amplifiers; Time-frequency analysis;
fLanguage
English
Journal_Title
Microwave Magazine, IEEE
Publisher
ieee
ISSN
1527-3342
Type
jour
DOI
10.1109/MMM.2014.2333431
Filename
6891444
Link To Document