• DocumentCode
    56083
  • Title

    Inverse Class-F Design Using Dynamic Loadline GaN HEMT Models to Help Designers Optimize PA Efficiency [Application Notes]

  • Author

    Pengelly, Raymond S. ; Pribble, William ; Smith, Tim

  • Author_Institution
    Cree Inc., Research Triangle Park, NC, USA
  • Volume
    15
  • Issue
    6
  • fYear
    2014
  • fDate
    Sept.-Oct. 2014
  • Firstpage
    134
  • Lastpage
    147
  • Abstract
    Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
  • Keywords
    III-V semiconductors; circuit optimisation; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; PA efficiency; circuit optimization; dynamic loadline HEMT models; inverse class-F power amplifier design; small cell systems; wireless base station; wireless transmission standards; Base stations; HEMT; Harmonic analysis; Integrated circuit modeling; Load modeling; Power amplifiers; Time-frequency analysis;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/MMM.2014.2333431
  • Filename
    6891444