Title :
1–8 GHz high efficiency single stage travelling wave power amplifier
Author :
Sayginer, Mustafa ; Yazgi, Metin ; Kuntman, H. Hakan ; Virdee, Bal S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Istanbul Tech. Univ., İstanbul, Turkey
Abstract :
In this paper a Class-A/AB operated wideband power amplifier is presented that comprises of only a single transistor travelling wave stage where capacitive coupling and frequency dependent lossy artificial transmission-line are employed at the input of the active device. These technique are shown to significantly enhance the amplifier frequency-bandwidth product, input match and gain flatness performance over 1-to-8 GHz operating bandwidth. Furthermore, a non-terminated output artificial transmission line inductance is determined using load-pull data to achieve an optimum power-bandwidth performance. Overall 1.31×2.93mm2 power amplifier design is fabricated by using 0.25μm GaAs PHEMT MMIC process and the amplifier delivers 1W and 0.5W peak Psat and Pout, 1dB levels respectively where the PAE levels are over 50% and 27% for Psat, and Pout, 1dB almost the entire 2-to-8 GHz frequency band.
Keywords :
MMIC amplifiers; gallium arsenide; high electron mobility transistors; power amplifiers; semiconductor device models; travelling wave amplifiers; wideband amplifiers; GaAs; GaAs PHEMT MMIC process; amplifier frequency-bandwidth product; capacitive coupling; class-A/AB operated wideband power amplifier; frequency 1 GHz to 8 GHz; load-pull data; lossy artificial transmission-line; nonterminated output artificial transmission line inductance; power 0.5 W; power 1 W; size 0.25 micron; transistor travelling wave stage; travelling wave power amplifier; Frequency measurement; Inductance; Power amplifiers; Semiconductor device measurement; Stability analysis; Transistors; Transmission lines;
Conference_Titel :
Electrical and Electronics Engineering (ELECO), 2011 7th International Conference on
Conference_Location :
Bursa
Print_ISBN :
978-1-4673-0160-2