Influence of the annealing condition on the BN bonds intensity detected by FTIR characterization

Author

Saci, L. ; Mahamdi, R. ; Mansour, F. ; Temple-Boyer, P. ; Scheid, E.

Author_Institution

Electron. Dept., Univ. of Constantine, Constantine, Algeria

fYear

2011

fDate

1-4 Dec. 2011

Abstract

In this work, we present infrared spectroscopy characterizations of poly-Si/NIDOS bi-layer films used as gate structure in standard complementary metal-oxide-semiconductor (CMOS) technology. These layers are obtained by low pressure vapour deposition (LPCVD) technique. The film consists on an amorphous silicon in-situ doped nitrogen (NIDOS) layer onto which is deposited a polysilicon in-situ doped boron (PolySi) layer. These PolySi/NIDOS bi-layer structures are deposited on oxidized monocrystalline silicon, and annealed at 600°C and 700 °C for different durations. Finally, the variations of the films chemical constitution are studied by Fourier transform infrared spectroscopy (FTIR). This analysis clearly shows the preservation the oxide quality by the formation of the BN bonds in the NIDOS/SiO₂ interface.

Keywords

Fourier transform spectra; amorphous semiconductors; annealing; boron; chemical vapour deposition; elemental semiconductors; infrared spectra; nitrogen; semiconductor doping; semiconductor thin films; silicon; CMOS; FTIR; Fourier transform infrared spectra; LPCVD; Si:N,B; SiO₂; amorphous silicon; annealing; boron doping; boron nitrogen bonds; gate structure; low pressure vapour deposition; nitrogen doping; oxidized monocrystalline silicon; polysilicon-NIDOS bilayer films; standard complementary metal-oxide-semiconductor techology; temperature 600 degC; temperature 700 degC; Absorption; Annealing; Boron; Films; Logic gates; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineering (ELECO), 2011 7th International Conference on

Conference_Location

Bursa

Print_ISBN

978-1-4673-0160-2

Type

conf

Filename

6140229