DocumentCode :
561061
Title :
Low temperature wafer bonding technologies
Author :
Haubold, M. ; Baum, Marcus ; Schubert, I. ; Leidich, S. ; Wiemer, M. ; Gessner, T.
Author_Institution :
Fraunhofer ENAS, Chemnitz, Germany
fYear :
2011
fDate :
12-15 Sept. 2011
Firstpage :
1
Lastpage :
8
Abstract :
This paper will give an overview on up to date research results for wafer bonding technologies using heterogeneous substrate materials and advanced activation treatments. The following descriptions give a short introduction to certain bonding technologies focusing on low processing temperature. As examples direct and anodic bonding technologies were chosen and presented as part of the fabrication process for RF-MEMS. Furthermore the paper will show the theoretical aspects of the single bonding procedure as well as the experiments and the results of the development.
Keywords :
cryogenic electronics; electronics packaging; micromechanical devices; wafer bonding; RF-MEMS; advanced activation treatments; anodic bonding technologies; direct bonding technologies; fabrication process; heterogeneous substrate materials; low processing temperature; low temperature wafer bonding technologies; single bonding procedure; Aluminum; Bonding; Glass; Silicon; Substrates; Surface treatment; Low temperature; direct anodic bonding; packaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Packaging Conference (EMPC), 2011 18th European
Conference_Location :
Brighton
Print_ISBN :
978-1-4673-0694-2
Type :
conf
Filename :
6142444
Link To Document :
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