Title :
Growth and characterization of compound semiconductor nanowires on Si
Author :
Gao, Q. ; Kang, J.H. ; Tan, H.H. ; Jackson, H.E. ; Smith, L.M. ; Yarrison-Rice, J.M. ; Zou, Jin ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.
Keywords :
III-V semiconductors; MOCVD; Raman spectra; energy gap; gallium arsenide; nanofabrication; nanowires; photoluminescence; semiconductor growth; transmission electron microscopy; GaAs; Si; Si (111) substrates; bandgap energy; compound semiconductor nanowires; crystal structure; light emission; metal organic chemical vapor deposition; microRaman spectroscopy; microphotoluminescence; nanowire heterostructure growth; strain effects; transmission electron microscopy; vapor-liquid-solid mechanism; Annealing; Buffer layers; Educational institutions; Gallium arsenide; Nanowires; Silicon; Substrates;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144553
